elektronische bauelemente UMX18N plastic-encapsulated general purpose transistors (dual transistors) 15-july-2009 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features z two chips in a package. z mounting possible with sot-363 automatic mounting machines. z transistor elements are independent, eliminating interference. z mounting cost and area be cut in half. marking x18 npn absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 6 v collector current i c 0.5 a collector power dissipation p c 0.15 w junction & storage temperature t j , t stg 150, -55 ~ 150 c npn electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 15 - - v i c =10 a, i e =0 collector-emitter breakdown voltage v (br)ceo 12 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 6 - - v i e =10 a, i c =0 collector cut-off current i cbo - - 100 na v cb =15v, i e =0 emitter cut-off current i ebo 100 na v eb =6v, i c =0 dc current gain h fe 270 - 680 v ce =2v, i c =10ma collector-emitter saturation voltage v ce(sat) - - 0.25 v i c =200ma, i b =10ma transition frequency f t - 320 - mhz v ce =2v, i e =-10ma, f=100mhz collector output capacitance c ob - 7.5 - pf v cb =10v, i e =0, f=1mhz 6 c 5 b 4 e 1 e 2 b 3 c millimete r millimete r ref. min. max. ref. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 sot-363 b l f h c j d g k a e 1
elektronische bauelemente UMX18N plastic-encapsulated general purpose transistors (dual transistors) 15-july-2009 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. typical characteristics UMX18N
|
